The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Mar. 13, 2012
Applicants:

Minoru Yamagami, Tokyo, JP;

Hisayuki Nagamine, Tokyo, JP;

Inventors:

Minoru Yamagami, Tokyo, JP;

Hisayuki Nagamine, Tokyo, JP;

Assignee:

PS4 Luxco S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/4097 (2006.01); G11C 7/22 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01); H01L 29/94 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4097 (2013.01); G11C 7/22 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); H01L 23/5223 (2013.01); H01L 23/5286 (2013.01); H01L 27/0203 (2013.01); H01L 27/0207 (2013.01); H01L 27/10885 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 28/86 (2013.01); H01L 29/94 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Disclosed herein is a device that includes: first and second memory mats each including a plurality of bit lines; a sense area arranged between the first and second memory mats; a column selection line provided on the first memory mat; and a compensation capacitance provided on the second memory mat. The sense area includes a plurality of sense amplifiers. Each of the sense amplifiers is connected to an associated one or ones of the bit lines. At least one of the sense amplifiers is selected based on a column selection signal supplied via the column selection line. At least a part of the compensation capacitance is formed in a same wiring layer as the column selection line.


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