The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jun. 13, 2012
Applicants:
Grégory Bidal, Grenoble, FR;
Laurent Favennec, Villard Bonnot, FR;
Raul Andres Bianchi, Myans, FR;
Inventors:
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/51 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 29/78 (2013.01); H01L 29/517 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 21/76224 (2013.01); H01L 21/28088 (2013.01); H01L 29/518 (2013.01); H01L 21/28202 (2013.01);
Abstract
An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench comprising an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer comprising nitrogen or carbon.