The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Mar. 29, 2010
Yoshifumi Ota, Osaka, JP;
Hirohiko Nishiki, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Takeshi Hara, Osaka, JP;
Tetsuya Aita, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Michiko Takei, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Hinae Mizuno, Yamato, JP;
Yoshifumi Ota, Osaka, JP;
Hirohiko Nishiki, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Takeshi Hara, Osaka, JP;
Tetsuya Aita, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Yuuji Mizuno, Osaka, JP;
Michiko Takei, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.