The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
May. 31, 2011
Applicants:
Jae-won Lee, Gwacheon-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02378 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02573 (2013.01); H01L 21/02381 (2013.01);
Abstract
According to example embodiments, a semiconductor device includes a first layer and second layer. The first layer includes a nitride semiconductor doped with a first type dopant. The second layer is below the first layer and includes a high concentration layer. The high concentration layer includes the nitride semiconductor doped with the first type dopant and has a doping concentration higher than a doping concentration of the first layer.