The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Nov. 10, 2011
Applicant:
Hiroyuki Takahashi, Yamanashi, JP;
Inventor:
Hiroyuki Takahashi, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 29/7843 (2013.01); H01L 29/78 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method for manufacturing a semiconductor device by etching a SiN film on a surface of a substrate by using a gas containing a halogen element includes supplying a gas containing a basic gas at the initial stage of a process for supplying the gas containing the halogen element to the surface of the SiN film. By supplying the gas containing the basic gas at the initial stage of the etching, a SiNO film covering the surface of the SiN film is changed to a film of reaction products mainly including water (HO) and ammonium hexafluorosilicate ((NH)SiF).