The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
May. 24, 2010
Applicant:
Issei Sakurai, Kakegawa, JP;
Inventor:
Issei Sakurai, Kakegawa, JP;
Assignee:
AZ Electronic Materials USA Corp., Somerville, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/76229 (2013.01); H01L 21/02222 (2013.01); H01L 21/02164 (2013.01); H01L 21/02326 (2013.01);
Abstract
The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a δH value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20° C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements.