The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jun. 26, 2013
Applicants:
Guodan Wei, San Jose, CA (US);
Paul F. MA, Santa Clara, CA (US);
Inventors:
Guodan Wei, San Jose, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); H01L 21/76856 (2013.01); H01L 21/76846 (2013.01); H01L 21/76843 (2013.01);
Abstract
Provided are methods of forming a ternary metal nitride film and more specifically, a TaSiN film. A metal nitride film, or TaN film, is deposited on a substrate with plasma treatment. A SiN layer is deposited on the metal nitride, or TaN, film to form a metal-SiN, or TaSiN, film. The film is then annealed to provide a metal nitride film with stable resistivity.