The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Sep. 27, 2012
Applicant:
Anpec Electronics Corporation, Hsin-Chu, TW;
Inventors:
Yung-Fa Lin, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Assignee:
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor transistor device. An epitaxial layer is grown on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A spacer is formed on a sidewall of the gate trench. A recess is formed at the bottom of the gate trench. A thermal oxidation process is performed to form an oxide layer in the recess. The oxide layer completely fills the recess. The spacer is then removed. A gate oxide layer is formed on the exposed sidewall of the gate trench. A gate is then formed into the gate trench.