The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Jan. 23, 2012
Wei-yuan LU, Taipei, TW;
Li-ping Huang, Taipei, TW;
Han-ting Tsai, Kaoshiung, TW;
Wei-ching Wang, Taichung, TW;
Ming-shuan LI, Zhudong Township, TW;
Hsueh-jen Yang, Taipei, TW;
Kuan-chung Chen, Taipei, TW;
Wei-Yuan Lu, Taipei, TW;
Li-Ping Huang, Taipei, TW;
Han-Ting Tsai, Kaoshiung, TW;
Wei-Ching Wang, Taichung, TW;
Ming-Shuan Li, Zhudong Township, TW;
Hsueh-Jen Yang, Taipei, TW;
Kuan-Chung Chen, Taipei, TW;
Abstract
A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film.