The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Aug. 20, 2009
Ralf Preu, Freiburg, DE;
Andreas Grohe, Freiburg, DE;
Daniel Biro, Freiburg, DE;
Jochen Rentsch, Emmendingen, DE;
Marc Hofmann, Gottenheim, DE;
Jan-frederik Nekarda, Freiburg im Breisgau, DE;
Andreas Wolf, Freiburg, DE;
Ralf Preu, Freiburg, DE;
Andreas Grohe, Freiburg, DE;
Daniel Biro, Freiburg, DE;
Jochen Rentsch, Emmendingen, DE;
Marc Hofmann, Gottenheim, DE;
Jan-Frederik Nekarda, Freiburg im Breisgau, DE;
Andreas Wolf, Freiburg, DE;
Abstract
A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.