The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Nov. 01, 2012
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Xin Zhao, Singapore, SG;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/14627 (2013.01); H01L 27/14625 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 27/14643 (2013.01); H01L 31/0232 (2013.01); H01L 31/02327 (2013.01);
Abstract
A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.
Quick Actions:
Zhao, Xin. (2014). Backside illumination (bsi) cmos image sensor process (U.S. Patent No. 8828779). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8828779
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile