The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Dec. 26, 2012
Asahi Glass Company, Limited, Tokyo, JP;
Masaki Mikami, Tokyo, JP;
Takeru Kinoshita, Tokyo, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Abstract
To provide an EUV mask blank whereby deterioration in reflectance due to oxidation of a Ru protective layer is suppressed, a functional film-attached substrate to be used for the production of the EUV mask blank, and a process for producing the functional film-attached substrate. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, between the reflective layer and the protective layer, an interlayer is formed which is composed of a first layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si, and a second layer containing from 60 to 99.8 at % of Ru, from 0.1 to 10 at % of nitrogen and from 0.1 to 30 at % of Si and which has a total thickness of the first and second layers being from 0.2 to 2.5 nm, the first layer constituting the interlayer is formed on the reflective layer side, and the second layer is formed on the first layer, and the protective layer contains substantially no Si.