The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Feb. 01, 2013
Hgst Netherlands B.v., Amsterdam, NL;
Guomin Mao, San Jose, CA (US);
Satyanarayana Myneni, Sunnyvale, CA (US);
Aron Pentek, San Jose, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
HGST Netherlands B.V, Amsterdam, NL;
Abstract
Write heads may be formed by reactive ion etching (RIE) a dielectric mask and then reactive ion etching a polymeric underlayer. The first RIE affects the second RIE. The first portion of the first RIE process is performed with a ratio of CFto CHFbetween about 1.3 to 2, a gas flow ratio of CFto He between 2.2 and about 3, and a ratio of RF source power to RF bias power between about 10 and about 16. The second portion of the first RIE process is performed with a ratio of CFto CHFbetween about 0.3 to 0.8, a gas flow ratio of CFto He between about 1.2 and about 1.8, and a ratio of RF source power to RF bias between about 22 to 28. With the above parameters, the dielectric mask can be formed with minimized damage on the underlayer.