The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Aug. 17, 2009
Applicants:

Ekishu Nagae, Kanagawa, JP;

Yousong Jiang, Kanagawa, JP;

Ichiro Shiono, Kanagawa, JP;

Tadayuki Shimizu, Kanagawa, JP;

Tatsuya Hayashi, Kanagawa, JP;

Makoto Furukawa, Kanagawa, JP;

Takanori Murata, Kanagawa, JP;

Inventors:

Ekishu Nagae, Kanagawa, JP;

Yousong Jiang, Kanagawa, JP;

Ichiro Shiono, Kanagawa, JP;

Tadayuki Shimizu, Kanagawa, JP;

Tatsuya Hayashi, Kanagawa, JP;

Makoto Furukawa, Kanagawa, JP;

Takanori Murata, Kanagawa, JP;

Assignee:

Shincron Co., Ltd., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/50 (2006.01); C23C 14/22 (2006.01); C23C 14/10 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/22 (2013.01); C23C 14/225 (2013.01); C23C 14/221 (2013.01); C23C 14/10 (2013.01); H01J 2237/3132 (2013.01); C23C 14/083 (2013.01); H01J 2237/0041 (2013.01);
Abstract

An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates () within a vacuum vessel (). A dome shaped holder () is disposed within the vacuum vessel () and holds the substrates (). A drive rotates the dome shaped holder (). A vapor depositing source () is disposed oppositely to the substrates (). An ion source () irradiates ions to the substrates (). A neutralizer () irradiates electrons to the substrates (). The ion source () is disposed at an angle between an axis, along which ions are irradiated from the ion source (), and a line perpendicular to a surface of each of the substrates (). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (), and (ii) a center of the ion source (), relative to a diameter of the dome shaped holder (), is between 0.5 inclusive and 1.2 inclusive.


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