The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Sep. 30, 2011
Applicants:

Michael Thaithanh Phan, Cary, NC (US);

Manish Garg, Morrisville, NC (US);

David Paul Hoff, Cary, NC (US);

Inventors:

Michael ThaiThanh Phan, Cary, NC (US);

Manish Garg, Morrisville, NC (US);

David Paul Hoff, Cary, NC (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and method for reducing leakage currents and power consumption in a memory array comprising memory cells, such as 8T SRAM cells. The memory array includes logic for dynamically placing a group of memory cells in the memory array in a reduced power state during sleep mode or inactive states of the group of memory cells, such that leakage parts are effectively eliminated. The memory array further includes logic for dynamically enabling a selected group of the memory cells during read or write access operations on the selected memory cells, wherein corresponding read or write bitlines are precharged before and after the respective rear or write operations.


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