The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Sep. 06, 2013
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Masaaki Ito, Hitachinaka, JP;

Minori Noguchi, Hitachinaka, JP;

Shigeru Matsui, Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/956 (2006.01); G01N 21/95 (2006.01); G01N 21/88 (2006.01); G06K 9/74 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 2021/8822 (2013.01); G06K 9/74 (2013.01); G01N 21/95623 (2013.01);
Abstract

The present invention provides an inspection apparatus having a high throughput and high sensitivity with respect to a number of various manufacturing processes and defects of interest in inspection of a specimen such as a semiconductor wafer on which a pattern is formed. The apparatus illuminates with light the specimen having the pattern formed thereon, forms an image of the specimen on an image sensor through a reflective optics, and determines the existence/nonexistence of a defect. The reflective optics has a conjugate pair of Fourier transform optics. An aberration of the reflective optics is corrected off-axis. The reflective optics has a field of view in non-straight-line slit form on the specimen surface. Also, the optics is of a reflection type, includes a conjugate pair of Fourier transform optics and has a field of view in non-straight-line slit form. An optimum wavelength band is selected according to the specimen (FIG.).


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