The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
May. 24, 2009
Applicants:
Chun Shiah, Hsinchu, TW;
Hao-jan Yang, Yunlin County, TW;
Ho-yin Chen, Hsinchu County, TW;
Kuo-chen Lai, Changhua County, TW;
Inventors:
Chun Shiah, Hsinchu, TW;
Hao-Jan Yang, Yunlin County, TW;
Ho-Yin Chen, Hsinchu County, TW;
Kuo-Chen Lai, Changhua County, TW;
Assignee:
Etron Technology, Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); G05F 1/56 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); G05F 1/561 (2013.01);
Abstract
A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current.