The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Oct. 04, 2012
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Wen-Pin Lin, Kaohsiung, TW;

Chih-He Lin, Yunlin County, TW;

Yu-Sheng Chen, Taoyuan County, TW;

Zhe-Hui Lin, Changhua County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/20 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H03K 19/20 (2013.01); H01L 23/5228 (2013.01);
Abstract

A logic gate including a first resistive non-volatile memory device and a second resistive non-volatile memory device is provided. When top electrodes of the first and the second resistive non-volatile memory devices are coupled to an output terminal of the logic gate, bottom electrodes of the first and the second resistive non-volatile memory devices are respectively coupled to a first input terminal and a second input terminal of the logic gate. When the bottom electrodes of the first and the second resistive non-volatile memory devices are coupled to the output terminal of the logic gate, the top electrodes of the first and the second resistive non-volatile memory devices are respectively coupled to the first input terminal and the second input terminal of the logic gate.


Find Patent Forward Citations

Loading…