The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Feb. 17, 2011
Gerald K Bartley, Rochester, MN (US);
Darryl J Becker, Rochester, MN (US);
Philip R Germann, Oronoco, MN (US);
Andrew B Maki, Rochester, MN (US);
John E Sheets, Ii, Zumbrota, MN (US);
Gerald K Bartley, Rochester, MN (US);
Darryl J Becker, Rochester, MN (US);
Philip R Germann, Oronoco, MN (US);
Andrew B Maki, Rochester, MN (US);
John E Sheets, II, Zumbrota, MN (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.