The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Feb. 13, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Takashi Watanabe, Mie-ken, JP;

Jun Takayasu, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/30 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/30625 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.


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