The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 12, 2013
Applicant:
Power Integrations, Inc., San Jose, CA (US);
Inventors:
Ting Gang Zhu, Somerset, NJ (US);
Marek Pabisz, Quakertown, PA (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/778 (2006.01); H01L 29/47 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 29/2003 (2013.01); H01L 29/475 (2013.01); H01L 21/28581 (2013.01); H01L 29/66143 (2013.01); H01L 29/47 (2013.01); H01L 29/7787 (2013.01);
Abstract
A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.