The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Apr. 26, 2013
Stmicroelectronics S.a., Montrouge, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Heimanu Niebojewski, Grenoble, FR;
Yves Morand, Grenoble, FR;
Cyrille Le Royer, Tullins, FR;
Fabrice Nemouchi, Moirans, FR;
STMicroelectronics S.A., Montrouge, FR;
Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris, FR;
Abstract
A method for forming gate, source, and drain contacts on a MOS transistor having an insulated gate including polysilicon covered with a metal gate silicide, this gate being surrounded with at least one spacer made of a first insulating material, the method including the steps of a) covering the structure with a second insulating material and leveling the second insulating material to reach the gate silicide; b) oxidizing the gate so that the gate silicide buries and covers the a silicon oxide; c) selectively removing the second insulating material; and d) covering the structure with a first conductive material and leveling the first conductive material all the way to a lower level at the top of the spacer.