The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 22, 2004
Davis Andrew Mcclure, Cary, NC (US);
Alexander Suvorov, Durham, NC (US);
John Adam Edmond, Cary, NC (US);
David Beardsley Slater, Jr., Raleigh, NC (US);
Davis Andrew McClure, Cary, NC (US);
Alexander Suvorov, Durham, NC (US);
John Adam Edmond, Cary, NC (US);
David Beardsley Slater, Jr., Raleigh, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.