The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 30, 2010
Applicant:
Kazunari Nakata, Tokyo, JP;
Inventor:
Kazunari Nakata, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of manufacturing a semiconductor device, which includes the steps of: (a) preparing a processing target including a wafer () and a protective member () formed on the wafer (); (b) measuring a thickness of the protective member () at a plurality of points; and (c) setting a desired value of a total thickness of the wafer () and the protective member () based on measurement results at the plurality of points to grind the wafer () in accordance with the desired value.
Nakata, Kazunari. (2014). Method of manufacturing a semiconductor device (U.S. Patent No. 8822241). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8822241
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