The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 16, 2011
Applicant:
Wei-cheng Shiu, Taoyuan County, TW;
Inventor:
Wei-Cheng Shiu, Taoyuan County, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
Abstract
A photomask is provided. The photomask is applied to a photolithography apparatus and includes a substrate with a mask pattern disposed thereon. The mask pattern includes at least one main pattern and a plurality of sub-resolution assistant features (SRAFs). The SRAFs are disposed around the at least one main pattern and separated from each other, wherein a distance between each of the SRAFs and the at least one main pattern is about 3 to 10 times a linewidth of the at least one main pattern. The photomask would result in an improved imaging quality on the wafer.