The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Sep. 11, 2012
Applicants:

Timothy W. Weidman, Sunnyvale, CA (US);

Todd Schroeder, Toledo, OH (US);

David Thompson, San Jose, CA (US);

Jeffrey W. Anthis, San Jose, CA (US);

Inventors:

Timothy W. Weidman, Sunnyvale, CA (US);

Todd Schroeder, Toledo, OH (US);

David Thompson, San Jose, CA (US);

Jeffrey W. Anthis, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/34 (2006.01); C23C 16/505 (2006.01); C23C 16/36 (2006.01);
U.S. Cl.
CPC ...
C23C 16/50 (2013.01); C23C 16/505 (2013.01); C23C 16/36 (2013.01);
Abstract

Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.


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