The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8821643 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 02, 2014

Filed:

Nov. 12, 2012
Applicants:

Balasubramanian Ramachandran, Santa Clara, CA (US);

Tae Jung Kim, Gyeonggi, KR;

Jung Hoon Sun, Kyung-Gi do, KR;

Joung Woo Lee, Singapore, SG;

Hwa Joong Lim, Kyunggi-Do, KR;

Sang Phil Lee, Kyounggi-Do, CN;

Joseph M. Ranish, San Jose, CA (US);

Inventors:

Balasubramanian Ramachandran, Santa Clara, CA (US);

Tae Jung Kim, Gyeonggi, KR;

Jung Hoon Sun, Kyung-Gi do, KR;

Joung Woo Lee, Singapore, SG;

Hwa Joong Lim, Kyunggi-Do, KR;

Sang Phil Lee, Kyounggi-Do, CN;

Joseph M. Ranish, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.


Find Patent Forward Citations

Ramachandran, Balasubramanian. (2014). In-situ chamber cleaning for an rtp chamber (U.S. Patent No. 8821643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8821643

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