The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jan. 29, 2008
Avgerinos V. Gelatos, Redwood City, CA (US);
Sang-hyeob Lee, Fremont, CA (US);
Xiaoxiong Yuan, San Jose, CA (US);
Salvador P. Umotoy, Antioch, CA (US);
Yu Chang, San Jose, CA (US);
Gwo-chuan Tzu, Sunnyvale, CA (US);
Emily Renuart, Santa Clara, CA (US);
Jing Lin, Mountain View, CA (US);
Wing-cheong Lai, Santa Clara, CA (US);
Sang Q. Le, San Jose, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Sang-Hyeob Lee, Fremont, CA (US);
Xiaoxiong Yuan, San Jose, CA (US);
Salvador P. Umotoy, Antioch, CA (US);
Yu Chang, San Jose, CA (US);
Gwo-Chuan Tzu, Sunnyvale, CA (US);
Emily Renuart, Santa Clara, CA (US);
Jing Lin, Mountain View, CA (US);
Wing-Cheong Lai, Santa Clara, CA (US);
Sang Q. Le, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.