The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jul. 11, 2012
Yu-hsiung Tsai, Hsinchu, TW;
Yuan-tai Lin, Hsinchu, TW;
Ching-yuan Lin, Hsinchu County, TW;
Chao-wei Kuo, Taipei, TW;
Shang-wei Fang, Yilan County, TW;
Wein-town Sun, Taoyuan County, TW;
Yu-Hsiung Tsai, Hsinchu, TW;
Yuan-Tai Lin, Hsinchu, TW;
Ching-Yuan Lin, Hsinchu County, TW;
Chao-Wei Kuo, Taipei, TW;
Shang-Wei Fang, Yilan County, TW;
Wein-Town Sun, Taoyuan County, TW;
Ememory Technology Inc., Hsin-Chu, TW;
Abstract
The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a program voltage. The current limiter reflects amount of the program current by a data-line signal, e.g., a data-line voltage. The program voltage generator generates and controls the program voltage in response to the data-line voltage, such that the program current can track to a constant reference current.