The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Feb. 16, 2011
Taro Asai, Chiba, JP;
Jun Gotoh, Mobara, JP;
Eiji Oue, Mobara, JP;
Hiroaki Asuma, Mobara, JP;
Katsumi Nakayashiki, Miyazaki, JP;
Makoto Kurita, Mobara, JP;
Taro Asai, Chiba, JP;
Jun Gotoh, Mobara, JP;
Eiji Oue, Mobara, JP;
Hiroaki Asuma, Mobara, JP;
Katsumi Nakayashiki, Miyazaki, JP;
Makoto Kurita, Mobara, JP;
Japan Display Inc., Tokyo, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-ken, JP;
Abstract
A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode. The source electrodeis formed of three layers comprising a barrier metal, an Al alloy, and a cap metal. The barrier metal is divided into a lower layerin contact with the semiconductor layer and an upper layerin contact with the Al alloy. The lower layerof the barrier metal is formed by sputtering, the lower layeris heat-treated and, subsequently, an upper layerof the base metal, the Al alloy, and the cap metalare formed continuously by sputtering. Since the upper layerof the barrier metal in contact with the Al alloyis not oxidized, increase in the contact resistance in the through-hole can be prevented.