The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Jul. 31, 2012
Applicants:

In-gyun Jeon, Seongnam-si, KR;

Se-jung OH, Seoul, KR;

Heui-gyun Ahn, Seongnam-si, KR;

Jun-ho Won, Seoul, KR;

Inventors:

In-Gyun Jeon, Seongnam-si, KR;

Se-Jung Oh, Seoul, KR;

Heui-Gyun Ahn, Seongnam-si, KR;

Jun-Ho Won, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14627 (2013.01); H01L 27/14687 (2013.01); H01L 27/14632 (2013.01); H01L 27/14643 (2013.01); H01L 27/14621 (2013.01); H01L 27/14685 (2013.01);
Abstract

An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.


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