The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jul. 17, 2012
Jae Hoon Lee, Suwon-si, KR;
Ki SE Kim, Suwon-si, KR;
Jung Hee Lee, Daegu, KR;
Ki Sik Im, Daegu, KR;
Dong Seok Kim, Daegu, KR;
Jae Hoon Lee, Suwon-si, KR;
Ki Se Kim, Suwon-si, KR;
Jung Hee Lee, Daegu, KR;
Ki Sik Im, Daegu, KR;
Dong Seok Kim, Daegu, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile