The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Mar. 09, 2010
Applicants:
Rick C. Jerome, Indialantic, FL (US);
Francois Hebert, San Mateo, CA (US);
Craig Mclachlan, Melbourne Beach, FL (US);
Kevin Hoopingarner, Palm Bay, FL (US);
Inventors:
Rick C. Jerome, Indialantic, FL (US);
Francois Hebert, San Mateo, CA (US);
Craig McLachlan, Melbourne Beach, FL (US);
Kevin Hoopingarner, Palm Bay, FL (US);
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.