The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Jun. 05, 2012
Applicants:

Jae-won Cha, Gyeonggi-do, KR;

Sung-hoon Ahn, Gyeonggi-do, KR;

Inventors:

Jae-Won Cha, Gyeonggi-do, KR;

Sung-Hoon Ahn, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01);
Abstract

A nonvolatile memory device includes: N (N is an integer equal to or greater than 2) number of nonvolatile memory cells disposed in a flag area of a page, N number of flag page buffers configured to input and output flag data to and from the nonvolatile memory cells of the flag area, and a data input/output control unit configured to select R number of flag page buffers so that the flag data is inputted and outputted from the R selected flag page buffers and no flag data is inputted and outputted through unselected N-R number of flag page buffers, wherein no one flag page buffer of the R selected flag page buffers is immediately adjacent to another one of the R selected flag page buffers.


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Cha, Jae-Won. (2014). Nonvolatile memory device (U.S. Patent No. 8812777). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8812777

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