The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
May. 14, 2012
Lawrence T. Clark, Phoenix, AZ (US);
Scott E. Thompson, Gainesville, FL (US);
Richard S. Roy, Dublin, CA (US);
Robert Rogenmoser, Santa Clara, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
Lawrence T. Clark, Phoenix, AZ (US);
Scott E. Thompson, Gainesville, FL (US);
Richard S. Roy, Dublin, CA (US);
Robert Rogenmoser, Santa Clara, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
Suvolta, Inc., Los Gatos, CA (US);
Abstract
An integrated circuit can include SRAM cells, with pull-up transistors, pull-down transistors, and pass-gate transistors having a screening region positioned a distance below the gate and separated from the gate by a semiconductor layer. The screening region has a concentration of screening region dopants, the concentration of screening region dopants being higher than a concentration of dopants in the semiconductor layer. The screening region can provide an enhanced body coefficient for the pull-up transistors to increase a read static noise margin of the SRAM cell when a bias voltage is applied to the screening region. Related methods are also disclosed.