The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Dec. 12, 2011
Applicants:

Koji Takemura, Osaka, JP;

Hiroshige Hirano, Nara, JP;

Masao Takahashi, Kyoto, JP;

Hikari Sano, Hyogo, JP;

Yutaka Itoh, Kyoto, JP;

Koji Koike, Osaka, JP;

Inventors:

Koji Takemura, Osaka, JP;

Hiroshige Hirano, Nara, JP;

Masao Takahashi, Kyoto, JP;

Hikari Sano, Hyogo, JP;

Yutaka Itoh, Kyoto, JP;

Koji Koike, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 22/32 (2013.01); H01L 2224/05094 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate; a first interlayer insulating film formed over the semiconductor substrate; a pad formed above the first interlayer insulating film; and a plurality of first interconnects spaced apart from each other in a portion of the first interlayer insulating film located below the pad. Below the pad, the first interconnects are formed in quadrangular plan shapes.


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