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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8810035 B1

PDFFull Text
Date of Patent:
Aug. 19, 2014

Filed:

Oct. 17, 2011

Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body

Applicants:

Taichi Nakamura, Osaka, JP;

Akio Furusawa, Osaka, JP;

Shigeaki Sakatani, Osaka, JP;

Hidetoshi Kitaura, Osaka, JP;

Yukihiro Ishimaru, Mie, JP;

Inventors:

Taichi Nakamura, Osaka, JP;

Akio Furusawa, Osaka, JP;

Shigeaki Sakatani, Osaka, JP;

Hidetoshi Kitaura, Osaka, JP;

Yukihiro Ishimaru, Mie, JP;

Assignee:

Panasonic Corporation, Osaka, JP;

Attorney:

RatnerPrestia

Primary Examiner:

Roy Potter

Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 35/26 (2006.01); H01L 21/56 (2006.01); B23K 35/30 (2006.01); C22C 5/02 (2006.01); C22C 13/00 (2006.01); C22C 5/06 (2006.01); B23K 35/02 (2006.01); B23K 1/00 (2006.01); C22C 9/00 (2006.01); C22C 1/04 (2006.01);
U.S. Cl.
CPC ...
H01L 24/30 (2013.01); B23K 35/26 (2013.01); H01L 2924/01019 (2013.01); H01L 2224/48091 (2013.01); H01L 21/563 (2013.01); B23K 35/3013 (2013.01); H01L 24/83 (2013.01); H01L 2924/0132 (2013.01); B23K 35/302 (2013.01); H01L 23/562 (2013.01); H01L 2924/01029 (2013.01); B23K 2201/40 (2013.01); C22C 5/02 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/01327 (2013.01); H01L 2224/29 (2013.01); C22C 1/0483 (2013.01); C22C 13/00 (2013.01); H01L 2224/73265 (2013.01); H01L 24/27 (2013.01); C22C 5/06 (2013.01); H01L 24/29 (2013.01); H01L 2224/83 (2013.01); B23K 35/0238 (2013.01); B23K 35/3006 (2013.01); B23K 1/0016 (2013.01); H01L 2924/01322 (2013.01); B23K 35/262 (2013.01); H01L 2924/01079 (2013.01); C22C 9/00 (2013.01); B22F 2999/00 (2013.01); H01L 2224/48247 (2013.01);
Abstract

A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.

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