The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jan. 23, 2012
Shunpei Yamazaki, Tokyo, JP;
Atsuo Isobe, Kanagawa, JP;
Toshihiko Saito, Kanagawa, JP;
Takehisa Hatano, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Junichi Koezuka, Tochigi, JP;
Yuichi Sato, Kanagawa, JP;
Shinji Ohno, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Atsuo Isobe, Kanagawa, JP;
Toshihiko Saito, Kanagawa, JP;
Takehisa Hatano, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Junichi Koezuka, Tochigi, JP;
Yuichi Sato, Kanagawa, JP;
Shinji Ohno, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.