The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Sep. 12, 2012
Shigenobu Maeda, Seongnam-si, KR;
Hyun-pil Noh, Seongnam-si, KR;
Choong-ho Lee, Yongin-si, KR;
Seog-heon Ham, Suwon-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Hyun-pil Noh, Seongnam-si, KR;
Choong-ho Lee, Yongin-si, KR;
Seog-heon Ham, Suwon-si, KR;
Abstract
Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.