The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Feb. 11, 2009
François Andrieu, Grenoble, FR;
Emmanuel Augendre, Montbonnot, FR;
Laurent Clavelier, Grenoble, FR;
Marek Kostrzewa, Grenoble, FR;
François Andrieu, Grenoble, FR;
Emmanuel Augendre, Montbonnot, FR;
Laurent Clavelier, Grenoble, FR;
Marek Kostrzewa, Grenoble, FR;
Abstract
An electronic subassembly and associated method for the production of an electronic subassembly include a semiconductor layer bearing at least a first transistor having an adjustable threshold voltage is joined to an insulator layer and in which a first trapping zone is formed at a predetermined first depth. The first trapping zone extends at least beneath a channel of the first transistor and includes traps of greater density than the density of traps outside the first trapping zone, in such a way that the semiconductor layer and the first trapping zone are capacitively coupled. The useful information from the first transistor includes the charge transport within this transistor. A second trapping zone can be formed that extends at least beneath a channel of a second transistor that is formed by a second implantation with an energy and/or a dose and/or atoms that differ from those used to form the first trapping zone.