The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Oct. 11, 2012
Omnivision Technologies, Inc., Santa Clara, CA (US);
Gang Chen, San Jose, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Zhenhong Fu, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor pixel includes a photosensitive element, a floating diffusion ('FD') region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is disposed in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.