The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Dec. 29, 2010
Applicants:
Olivier Le Neel, Singapore, SG;
Ravi Shankar, Singapore, SG;
Calvin Leung, Singapore, SG;
Inventors:
Assignee:
STMicroelectronics Pte Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 49/00 (2006.01);
U.S. Cl.
CPC ...
H01L 49/00 (2013.01); Y10S 257/902 (2013.01);
Abstract
A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.