The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

May. 05, 2011
Applicants:

Shunpei Yamazaki, Tokyo, JP;

Kiyoshi Kato, Kanagawa, JP;

Yutaka Shionoiri, Kanagawa, JP;

Yusuke Sekine, Kanagawa, JP;

Kazuma Furutani, Kanagawa, JP;

Hiromichi Godo, Kanagawa, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Kiyoshi Kato, Kanagawa, JP;

Yutaka Shionoiri, Kanagawa, JP;

Yusuke Sekine, Kanagawa, JP;

Kazuma Furutani, Kanagawa, JP;

Hiromichi Godo, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.


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