The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8809828 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 19, 2014

Filed:

Feb. 13, 2014
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Matthew J. Breitwisch, Essex Junction, VT (US);

Eric A. Joseph, White Plains, NY (US);

Chung H. Lam, Yorktown Heights, NY (US);

Hsiang-Lan Lung, Dobbs Ferry, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An example embodiment disclosed is a phase change memory cell in a semiconductor wafer. The semiconductor wafer includes a first metalization layer (Metal 1). The phase change memory cell includes an insulating substrate defining a non-sublithographic via. The non-sublithographic via is located on the first metalization layer and includes a bottom and a sidewall. Intermediate insulating material is positioned below the insulating substrate. The intermediate insulating material defines a sublithographic aperture passing through the bottom of the non-sublithographic via. A bottom electrode is positioned within the sublithographic aperture, and is composed of conductive non-phase change material. The non-sublithographic via includes phase change material positioned within. The phase change material is electrically coupled to the bottom electrode. A liner is positioned along the sidewall of the non-sublithographic via. The liner is electrically coupled to the phase change material and is composed of the conductive non-phase change material.


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