The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Feb. 20, 2012
Hiraku Ishikawa, Sendai, JP;
Teruyuki Hayashi, Nirasaki, JP;
Takaaki Matsuoka, Tokyo, JP;
Yuji Ono, Oshu, JP;
Hiraku Ishikawa, Sendai, JP;
Teruyuki Hayashi, Nirasaki, JP;
Takaaki Matsuoka, Tokyo, JP;
Yuji Ono, Oshu, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.