The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
May. 30, 2008
Mitsuhiro Ichijo, Kanagawa, JP;
Tetsuhiro Tanaka, Tochigi, JP;
Takashi Ohtsuki, Kanagawa, JP;
Seiji Yasumoto, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Shunpei Yamazaki, Tokyo, JP;
Naoya Sakamoto, Tochigi, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Tetsuhiro Tanaka, Tochigi, JP;
Takashi Ohtsuki, Kanagawa, JP;
Seiji Yasumoto, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Shunpei Yamazaki, Tokyo, JP;
Naoya Sakamoto, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.