The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Feb. 12, 2011
Tetsuya Nishizuka, Portland, OR (US);
Tetsuya Nishizuka, Portland, OR (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A processing method is provided for plasma etching features in a silicon nitride (SiN) film covered by a mask pattern. The method includes preparing a film stack on a substrate, the film stack containing a SiN film on the substrate and a mask pattern on the SiN film, forming a plasma from a process gas containing HBr gas, Ogas, and a carbon-fluorine-containing gas, applying pulsed RF bias power to the substrate, and transferring the mask pattern to the SiN film by exposing the film stack to the plasma.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile