The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jan. 23, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a first and a second gate stack to cover a first and a second middle portion of a first and a second semiconductor fin, respectively, and performing implantations to implant exposed portions of the first and the second semiconductor fins to form a first and a second n-type doped region, respectively. A portion of each of the first and the second middle portions is protected from the implantations. The first n-type doped region and the second n-type doped region have different gate proximities from edges of the first gate stack and the second stack, respectively. The first and the second n-type doped regions are etched using chlorine radicals to form a first and a second recess, respectively. An epitaxy is performed to re-grow a first semiconductor region and a second semiconductor region in the first recess and the second recess, respectively.