The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Sep. 10, 2013
Applicants:
Eric R. Fossum, Wolfeboro, NH (US);
Dae-kil Cha, Suncheon-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
Soo-jung Hwang, Gunpo-si, KR;
Inventors:
Eric R. Fossum, Wolfeboro, NH (US);
Dae-Kil Cha, Suncheon-si, KR;
Young-Gu Jin, Hwaseong-si, KR;
Yoon-Dong Park, Yongin-si, KR;
Soo-Jung Hwang, Gunpo-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.