The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jun. 02, 2009
Min-seok OH, Yongin-si, KR;
Jung-tae Kim, Seoul, KR;
Nam-kyu Song, Hwaseong-si, KR;
Min Park, Seoul, KR;
Yun-seok Lee, Yongin-si, KR;
Czang-ho Lee, Hwaseong-si, KR;
Myung-hun Shin, Suwon-si, KR;
Byoung-kyu Lee, Suwon-si, KR;
Yuk-hyun Nam, Goyang-si, KR;
Seung-jae Jung, Seoul, KR;
Mi-hwa Lim, Chungcheongnam-do, KR;
Joon-young Seo, Seoul, KR;
Dong-uk Choi, Seoul, KR;
Dong-seop Kim, Seoul, KR;
Byoung-june Kim, Seoul, KR;
Min-Seok Oh, Yongin-si, KR;
Jung-Tae Kim, Seoul, KR;
Nam-Kyu Song, Hwaseong-si, KR;
Min Park, Seoul, KR;
Yun-Seok Lee, Yongin-si, KR;
Czang-Ho Lee, Hwaseong-si, KR;
Myung-Hun Shin, Suwon-si, KR;
Byoung-Kyu Lee, Suwon-si, KR;
Yuk-Hyun Nam, Goyang-si, KR;
Seung-Jae Jung, Seoul, KR;
Mi-Hwa Lim, Chungcheongnam-do, KR;
Joon-Young Seo, Seoul, KR;
Dong-Uk Choi, Seoul, KR;
Dong-Seop Kim, Seoul, KR;
Byoung-June Kim, Seoul, KR;
Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;
Abstract
Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.